sangdest microelectronics technical data green products data sheet n1491, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MURS360B MURS360B ultrafast plastic rectifier applications: switching power supply power switching circuits general purpose features: glass passivated die construction ideally suited for automatic assembly low forward voltage drop, high efficiency low power loss super fast recovery time plastic case material has ul flammability classific ation rating 94v-o this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm smb
sangdest microelectronics technical data green products data sheet n1491, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MURS360B marking diagram: where xxxxx is yywwl murs = device type 3 = forward current (3a) 60 = reverse voltage (600v) b = package type yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MURS360B smb (pb-free) 3000pcs / reel for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification.
sangdest microelectronics technical data green products data sheet n1491, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MURS360B maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inducti ve load. for capacitive load, derate current by 20%. characteristic symbol MURS360B unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 600 v rms reverse voltage v r(rms) 420 v average rectified output current (note 1) @t a = 55c io 3.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a forward voltage (per element) @i f = 3.0a v fm 1.25 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 125c i rm 10 500 a maximum reverse recovery time (note 1) trr 50 ns typical thermal resistance junction to ambient (note 2) r ja 25 k/w max. junction temperature t j -55 to +150 c storage temperature range t stg -55 to +150 c approximate weight wt 0.68 g case style smb note: 1. reverse recovery test conditions: if=0.5a, ir=1.0a, irr=0.25a 2. mount on cu-pad size 16mm16mm on p.c.b.
sangdest microelectronics technical data green products data sheet n1491, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MURS360B
sangdest microelectronics technical data green products data sheet n1491, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn MURS360B disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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